Gallium arsenide (GaAs) is a kind of excellent semiconductor material, which has the characteristics of direct band gap, high electron mobility, high frequency and low noise, high conversion efficiency and so on. We can provide 1-8 inch gallium arsenide substrates grown using the VGF method, including semi-insulating gallium arsenide substrates (non-doped) and semiconductor gallium arsenide substrates (Si-doped, Zn-doped).

Indium phosphide (InP) is one of the most important III-V compound semiconductors, which has the advantages of high electron mobility, good radiation resistance and large band gap. We offer 2-6 inch Indium Phosphide (InP) substrates grown using the VGF process, including semi-insulating InP substrates (Fe-doped) and semiconducting InP substrates (Si-doped or Zn-doped), as well as low-dislocation InP substrates for specific applications.

Germanium monocrystalline wafer is an important semiconductor substrate material with good semiconductor properties, such as electron mobility, hole mobility and so on. We can provide low or zero dislocation germanium (Ge) substrates with a diameter of 2-8 inches and a resistivity in the range of 0.005 Ω · cm to 50 Ω · cm.

Fully introduce and absorb the original Honeywell substrate cutting, grinding and testing technology, with mature 2, 4, 6, 8 inch sapphire substrate processing technology.